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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16b.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZGivnK2Y/S9jfT
Repositorysid.inpe.br/mtc-m17@80/2007/11.13.13.10   (restricted access)
Last Update2007:11.13.13.10.45 (UTC) marciana
Metadata Repositorysid.inpe.br/mtc-m17@80/2007/11.13.13.10.46
Metadata Last Update2024:05.17.11.33.07 (UTC) marciana
Secondary KeyINPE-14901-PRE/9815
ISSN1434-6060
Labelself-archiving-INPE-MCTIC-GOV-BR
Citation KeyTanUeRoDiAbRe:2007:NiPlIo
TitleNitrogen plasma ion implantation in silicon using short pulse high voltage glow discharges
Year2007
MonthSept.
Access Date2024, May 18
Secondary TypePRE PI
Number of Files1
Size473 KiB
2. Context
Author1 Tan, Ing Hwie
2 Ueda, Mário
3 Rossi, José Osvaldo
4 Diaz, B.
5 Abramof, Eduardo
6 Reuther, H.
Resume Identifier1 8JMKD3MGP5W/3C9JHDC
2
3
4
5 8JMKD3MGP5W/3C9JGUH
Group1 LAP-INPE-MCT-BR
2 LAP-INPE-MCT-BR
3 LAP-INPE-MCT-BR
4 LAS-INPE-MCT-BR
5 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Research Center Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
JournalJournal of Physics D: Applied Physics
Volume40
Number17
Pages5196-5201
History (UTC)2007-11-13 13:10:46 :: simone -> administrator ::
2008-06-29 02:36:51 :: administrator -> banon ::
2008-11-06 18:41:22 :: banon -> administrator ::
2012-10-23 23:58:45 :: administrator -> simone :: 2007
2013-02-20 15:20:02 :: simone -> administrator :: 2007
2018-06-05 03:35:01 :: administrator -> marciana :: 2007
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
KeywordsX-RAY-DIFFRACTION
ALUMINUM
DYNAMICS
AbstractA high voltage ( HV) pulse generator based on Blumlein technology was used to implant nitrogen ions into silicon substrates by immersion in a plasma generated by the HV pulse itself. Working pressures, applied HVs and treatment times were varied. Elemental depth profiles determined by Auger electron spectroscopy showed deeper penetration for higher voltages and broader profiles for increased treatment times indicating higher diffusion, as expected. Penetration depths, however, were about half of the values calculated by the SRIM code, probably due to the short duration of the HV pulse. The high- resolution x- ray diffraction omega/ 2. scans measured around the ( 0 0 4) Si Bragg reflection of implanted samples had shoulders in the lower. side, indicating a lattice expansion in the direction normal to the surface. Dynamical diffraction theory of Takagi - Taupin was used to fit the measured spectra, thus finding the strain profiles in the implanted samples. Both maximum strain values and integrated strains increased for samples implanted with higher voltages and treatment times and were almost independent of pressure.
AreaFISPLASMA
Arrangement 1urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Nitrogen plasma ion...
Arrangement 2urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > Nitrogen plasma ion...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target Filenitrogen plasma ion implantation.pdf
User Groupadministrator
banon
simone
Reader Groupadministrator
marciana
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft12
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES.
Host Collectionlcp.inpe.br/ignes/2004/02.12.18.39
cptec.inpe.br/walmeida/2003/04.25.17.12
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel doi e-mailaddress electronicmailaddress format isbn lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url
7. Description control
e-Mail (login)marciana
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